- A.Y. Polyakov, I. Shchemerov, E.B. Yakimov, A. Chernykh, S. Chernykh, A. Vasilev, N. Matros, A. Romanov, L. Alexanyan, E.E. Yakimov, and S.J. Pearton, “Deep traps in Ga2O3 Schottky diodes induced by soft electric breakdown,” Materials Advances 6(22),
8635–8644 (2025). - S.J. Pearton, F. Ren, A.Y. Polyakov, A. Haque, M. Labed, and Y.S. Rim, “Status of Ga2O3 for power device and UV photodetector applications,” Applied Physics Reviews 12(3), (2025).
- A. Polyakov, A. Miakonkikh, V. Volkov, E. Yakimov, I. Schemerov, A. Vasilev, A. Romanov, L. Alexanyan, A. Chernykh, S. Chernykh, and S. Pearton, “Trap states in HfO2/Ga2O3 and Al2O3/Ga2O3 metal insulator semiconductor structures,” ACS Applied Electronic Materials, (2025).
- H.-H. Wan, F. Ren, A.Y. Polyakov, A. Haque, J. Bae, J. Kim, A. Rabin, A. Aitkaliyeva, and S.J. Pearton, “Defining the relative proton irradiation hardness of β-Ga2O3,” Journal of Vacuum Science & Technology a Vacuum Surfaces and Films 43(4), (2025).
- A.Y. Polyakov, V.I. Nikolaev, A.A. Vasilev, E.B. Yakimov, A.I. Pechnikov, I.V. Schemerov, A.A. Romanov, L.A. Alexanyan, A.V. Chernykh, A.V. Miakonkikh, A. Kislyuk, A.V. Panichkin, and S.J. Pearton, “Creation of shallow donor states in hydrogen plasma exposed undoped α-Ga2O3,” Journal of Alloys and Compounds 1026, 180291 (2025).
- E.B. Yakimov, E.E. Yakimov, A.Y. Polyakov, A.A. Vasilev, I.V. Schemerov, A. Kuznetsov, and S.J. Pearton, “Depth-resolved cathodoluminescence in γ/β-Ga2O3 polymorph junctions,” APL Materials 13(4), (2025).
- A.Y. Polyakov, I.V. Schemerov, A.A. Vasilev, A.A. Romanov, P.B. Lagov, A.V. Miakonkikh, A.V. Chernykh, E.P. Romanteeva, S.V. Chernykh, O.I. Rabinovich, and S.J. Pearton, “Trap states and hydrogenation of implanted Si in semi-insulating Ga2O3(Fe),” Journal of Vacuum Science & Technology a Vacuum Surfaces and Films 43(3), (2025).
- S.J. Pearton, F. Ren, A.Y. Polyakov, E.B. Yakimov, L. Chernyak, and A. Haque, “Perspective on comparative radiation hardness of Ga2O3 polymorphs,” Journal of Vacuum Science & Technology a Vacuum Surfaces and Films 43(3), (2025).
- M. Li, A.Y. Polyakov, Q. Li, A.A. Vasilev, A.A. Romanov, N.R. Matros, L.A. Alexanyan, Q. Zhang, D. Lai, B. Zhang, Y. Lu, S. Liang, C. Liu, and Y. He, “Deep traps and persistent photocapacitance in p-SnO2/i-ZrxSn1-xO2/n-SnO2 p-i-n diodes,” Physica B Condensed Matter 699, 416796 (2024).
- V.I. Nikolaev, A.Y. Polyakov, V.M. Krymov, D.S. Saranin, A.V. Chernykh, A.A. Vasilev, I.V. Schemerov, A.A. Romanov, N.R. Matros, A.I. Kochkova, P. Gostishchev, S.V. Chernykh, S.V. Shapenkov, P.N. Butenko, E.B. Yakimov, and S.J. Pearton, “Trap states in P-NIO/n-Ga2O3 heterojunctions on Czochralski Β-Ga2O3 crystals,” ECS Journal of Solid State Science and Technology 13(12), 123004 (2024).
- A.Y. Polyakov, L.A. Alexanyan, I.V. Schemerov, A.A. Vasilev, A.V. Chernykh, A. Ivanov, N. Talnishnikh, A. Chernyakov, A.L. Zakgeim, N.M. Shmidt, P.B. Lagov, A.S. Doroshkevich, R.Sh. Isayev, Yu.S. Pavlov, H.-H. Wan, F. Ren, and S.J. Pearton, “Point defect effects in AlGaN
270-nm light emitting diodes introduced by MeV electron and proton irradiation,” APL Materials 12(12), (2024). - A.Y. Polyakov, E.B. Yakimov, I.V. Shchemerov, A.A. Vasilev, A.I. Kochkova, V.I. Nikolaev, and S.J. Pearton, “Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga2O3: effects of carrier trapping with deep centers,” Journal of Physics D Applied Physics 58(6), 063002 (2024).
- A.Y. Polyakov, D.S. Saranin, I.V. Shchemerov, A.A. Vasilev, A.A. Romanov, A.I. Kochkova, P. Gostischev, A.V. Chernykh, L.A. Alexanyan, N.R. Matros, P.B. Lagov, A.S. Doroshkevich, R.Sh. Isayev, Yu.S. Pavlov, A.M. Kislyuk, E.B. Yakimov, and S.J. Pearton, “Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions,” Scientific Reports 14(1), 27936 (2024).
- A.Y. Polyakov, A.A. Vasilev, I.V. Shchemerov, A.V. Chernykh, A.I. Kochkova, L.A. Alexanyan, N.R. Matros, H.-H. Wan, N.S. Al-Mamun, A. Haque, F. Ren, and S.J. Pearton, “Deep Traps in ALN Hydride Vapor Phase Epitaxy film on Low-Temperature ALN/Sapphire,” ECS Journal of Solid State Science and Technology 13(10), 103003 (2024).
- T.S. Le, I.A. Chuyko, L.O. Luchnikov, E.A. Ilicheva, P.K. Sukhorukova, D.O. Balakirev, N.S. Saratovsky, A.O. Alekseev, S.S. Kozlov, D.S. Muratov, V.A. Voronov, P.A. Gostishchev, D.A. Kiselev, T.S. Ilina, A.A. Vasilev, A.Y. Polyakov, E.A. Svidchenko, O.A. Maloshitskaya, Y.N. Luponosov, and D.S. Saranin, “Tailoring wetting properties of organic Hole‐Transport interlayers for Slot‐Die‐Coated perovskite solar modules,” Solar RRL 8(22), (2024).
- I.-H. Lee, Y.-H. Cho, L.A. Alexanyan, M.L. Skorikov, A.A. Vasilev, A.A. Romanov, N.R. Matros, A.I. Kochkova, A.Y. Polyakov, and S.J. Pearton, “Role of surface treatments and localized surface plasmon nanoparticles on internal quantum efficiency of 800 nm diameter blue GaN/InGaN nano light emitting diodes,” Journal of Alloys and Compounds 998, 174921 (2024).
- V.I. Nikolaev, S.V. Shapenkov, R.B. Timashov, A.I. Stepanov, M.P. Scheglov, A.V. Chikiryaka, A.Y. Polyakov, and S.J. Pearton, “High-quality Cr2O3 — Ga2O3 solid solutions films grown by mist-CVD epitaxy,” Journal of Alloys and Compounds 994, 174687 (2024).
- A.A. Vasilev, A.I. Kochkova, A.Y. Polyakov, A.A. Romanov, N.R. Matros, L.A. Alexanyan, I.V. Shchemerov, and S.J. Pearton, “Observation of temperature-dependent capture cross section for main deep-levels in β-Ga2O3,” Journal of Applied Physics 136(2), (2024).
- A.Y. Polyakov, E.B. Yakimov, D.S. Saranin, A.V. Chernykh, A.A. Vasilev, P. Gostishchev, A.I. Kochkova, L.A. Alexanyan, N.R. Matros, I.V. Shchemerov, and S.J. Pearton, “Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions,” Journal of Applied Physics 135(16), (2024).
- V.I. Nikolaev, A.Y. Polyakov, V.M. Krymov, S.V. Shapenkov, P.N. Butenko, E.B. Yakimov, A.A. Vasilev, I.V. Schemerov, A.V. Chernykh, N.R. Matros, L.A. Alexanyan, A.I. Kochkova, and S.J. Pearton, “Trap states and carrier diffusion in Czochralski (100) single crystal Β-Ga2O3,” ECS Journal of Solid State Science and Technology 13(1), 015003 (2024).
- A.Y. Polyakov, A.A. Vasilev, A.I. Kochkova, I.V. Shchemerov, E.B. Yakimov, A.V. Miakonkikh, A.V. Chernykh, P.B. Lagov, Y.S. Pavlov, A.S. Doroshkevich, R.Sh. Isaev, A.A. Romanov, L.A. Alexanyan, N. Matros, A. Azarov, A. Kuznetsov, and S. Pearton, “Proton damage effects in double polymorph γ/β-Ga2O3 diodes,” Journal of Materials Chemistry C 12(3),
1020–1029 (2023). - V.I. Nikolaev, A.Ya. Polyakov, S.I. Stepanov, A.I. Pechnikov, V.V. Nikolaev, E.B. Yakimov, M.P. Scheglov, A.V. Chikiryaka, L.I. Guzilova, R.B. Timashov, S.V. Shapenkov, and P.N. Butenko, “Record Thick κ(ε)-Ga2O3 Epitaxial Layers Grown on GaN/c-Sapphire,” Technical Physics 68(12),
689–694 (2023). - V.I. Nikolaev, R.B. Timashov, A.I. Stepanov, S.I. Stepanov, A.V. Chikiryaka, M.P. Shcheglov, and A.Ya. Polyakov, “Synthesis of thin Single-Crystalline α-Cr2O3 layers on sapphire substrates by Ultrasonic-Assisted chemical vapor deposition,” Technical Physics Letters 49(S3), S284—S287 (2023).
- I.V. Schemerov, A.Y. Polyakov, A.V. Almaev, V.I. Nikolaev, S.P. Kobeleva, A.A. Vasilyev, V.D. Kirilov, A.I. Kochkova, V.V. Kopiev, and Yu.O. Kulanchikov, “Study of the abnormally high photocurrent relaxation time in Α-Ga2O3-Based Schottky diodes,” Russian Microelectronics 52(8),
827–834 (2023). - I.V. Schemerov, A.Y. Polyakov, A.A. Vasilev, V.I. Nikolaev, A.I. Pechnikov, A.V. Chernykh, A.A. Romanov, and S.J. Pearton, “Direct observation of the stretching of the photoinduced current relaxation in Α-Ga2O3 Schottky diodes,” ECS Journal of Solid State Science and Technology 12(12), 125004 (2023).
- V.I. Nikolaev, A.Y. Polyakov, A.V. Myasoedov, I.S. Pavlov, A.V. Morozov, A.I. Pechnikov, I.-H. Lee, E.B. Yakimov, A.A. Vasilev, M.P. Scheglov, A.I. Kochkova, and S.J. Pearton, “Structural, Electrical, and luminescent properties of orthorhombic κ-Ga2O3 grown by epitaxial lateral overgrowth,” ECS Journal of Solid State Science and Technology 12(11), 115001 (2023).
- A.Y. Polyakov, E.B. Yakimov, V.I. Nikolaev, A.I. Pechnikov, A.V. Miakonkikh, A. Azarov, I.-H. Lee, A.A. Vasilev, A.I. Kochkova, I.V. Shchemerov, A. Kuznetsov, and S.J. Pearton, “Impact of hydrogen plasma on electrical properties and deep trap spectra in Ga2O3 polymorphs,” Crystals 13(9), 1400 (2023).
- A. Polyakov, I. Lee, V. Nikolaev, A. Pechnikov, A. Miakonkikh, M. Scheglov, E. Yakimov, A. Chikiryaka, A. Vasilev, A. Kochkova, I. Shchemerov, A. Chernykh, and S. Pearton, “Properties of Κ‐Ga2O3 prepared by epitaxial lateral overgrowth,” Advanced Materials Interfaces 12(2), (2023).
- I.V. Schemerov, A.Ya. Polyakov, P.B. Lagov, S.P. Kobeleva, A.I. Kochkova, Yu.O. Kulanchikov, A.S. Doroshkevich, and V.D. Kirilov, “The effect of trapping sites introduced by 1 MeV proton irradiation on the reverse current recovery time in Ga2O3-based Schottky diodes,” Industrial Laboratory Diagnostics of Materials 89(7),
25–33 (2023). - I.V. Schemerov, A.Y. Polyakov, A.V. Almaev, V.I. Nikolaev, S.P. Kobeleva, A.A. Vasilyev, V.D. Kirilov, A.I. Kochkova, V.V. Kopiev, and Yu.O. Kulanchikov, “Nature of the abnormally high photocurrent relaxation time in the α-Ga2O3-based Schottky diodes,” Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 26(2),
137–147 (2023). - A.Y. Polyakov, A.A. Vasilev, I.V. Shchemerov, A.V. Chernykh, I.V. Shetinin, E.V. Zhevnerov, A.I. Kochkova, P.B. Lagov, A.V. Miakonkikh, Yu.S. Pavlov, U.A. Kobets, I.-H. Lee, A. Kuznetsov, and S.J. Pearton, “Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3,” Journal of Alloys and Compounds 945, 169258 (2023).
- A.Y. Polyakov, A. Kuznetsov, A. Azarov, A.V. Miakonkikh, A.V. Chernykh, A.A. Vasilev, I.V. Shchemerov, A.I. Kochkova, N.R. Matros, and S.J. Pearton, “The effects of hydrogenation on the properties of heavy ion irradiated β-Ga2O3,” Journal of Materials Science Materials in Electronics 34(15), (2023).
- A.Y. Polyakov, V.I. Nikolaev, A.I. Pechnikov, P.B. Lagov, I.V. Shchemerov, A.A. Vasilev, A.V. Chernykh, A.I. Kochkova, L. Guzilova, Y.S. Pavlov, T.V. Kulevoy, A.S. Doroshkevich, R.S. Isaev, A.V. Panichkin, and S.J. Pearton, “Carrier removal rates in 1.1 MeV proton irradiated α-Ga2O3 (Sn),” Journal of Physics D Applied Physics 56(30), 305103 (2023).
- A.Y. Polyakov, V.I. Nikolaev, A.I. Pechnikov, E.B. Yakimov, P.B. Lagov, I.V. Shchemerov, A.A. Vasilev, A.I. Kochkova, A.V. Chernykh, I.-H. Lee, and S.J. Pearton, “Transport and trap states in proton irradiated ultra-thick κ-Ga2O3,” Journal of Vacuum Science & Technology a Vacuum Surfaces and Films 41(3), (2023).
- E.B. Yakimov, V.I. Nikolaev, A.I. Pechnikov, A.Y. Polyakov, I.V. Shchemerov, A.A. Vasilev, Y.O. Kulanchikov, P.S. Vergeles, E.E. Yakimov, and S.J. Pearton, “Electron beam induced current study of photocurrent gain in Κ-Ga2O3 Schottky diodes,” ECS Journal of Solid State Science and Technology 12(4), 044009 (2023).
- A.Y. Polyakov, A.V. Almaev, V.I. Nikolaev, A.I. Pechnikov, V.I. Shchemerov, A.A. Vasilev, E.B. Yakimov, A.I. Kochkova, V.V. Kopyev, B.O. Kushnarev, and S.J. Pearton, “Mechanism for long photocurrent time constants in Α-Ga2O3 UV photodetectors,” ECS Journal of Solid State Science and Technology 12(4), 045002 (2023).
- E.B. Yakimov, E.B. Yakimov, A.Y. Polyakov, V.I. Nikolaev, A.I. Pechnikov, M.P. Scheglov, E.E. Yakimov, E.E. Yakimov, and S.J. Pearton, “Electrical and recombination properties of polar orthorhombic Κ-Ga2O3 films prepared by Halide Vapor Phase Epitaxy,” Nanomaterials 13(7), 1214 (2023).
- A.Y. Polyakov, А.I. Kochkova, A. Azarov, V. Venkatachalapathy, A.V. Miakonkikh, A.A. Vasilev, A.V. Chernykh, I.V. Shchemerov, A.A. Romanov, A. Kuznetsov, and S.J. Pearton, “Tuning electrical properties in Ga2O3 polymorphs induced with ion beams,” Journal of Applied Physics 133(9), (2023).
- V.I. Nikolaev, A.Y. Polyakov, S.I. Stepanov, A.I. Pechnikov, E.B. Yakimov, A.V. Chernykh, A.A. Vasilev, I.V. Shchemerov, A.I. Kochkova, L. Guzilova, M.P. Konovalov, and S.J. Pearton, “Electrical and Structural Properties of Two-Inch Diameter (0001) α -Ga 2 O 3 Films Doped with Sn and Grown by Halide Epitaxy,” ECS Journal of Solid State Science and Technology 11(11), 115002 (2022).
- I.-H. Lee, T.-H. Kim, A.Y. Polyakov, A.V. Chernykh, M.L. Skorikov, E.B. Yakimov, L.A. Alexanyan, I.V. Shchemerov, A.A. Vasilev, and S.J. Pearton, “Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm,” Journal of Alloys and Compounds 921, 166072 (2022).
- A. Polyakov, V. Nikolaev, S. Stepanov, A. Almaev, A. Pechnikov, E. Yakimov, B.O. Kushnarev, I. Shchemerov, M. Scheglov, A. Chernykh, A. Vasilev, A. Kochkova, L. Guzilova, and S.J. Pearton, “Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers,” Journal of Physics D Applied Physics 55(49), 495102 (2022).
- A.A. Vasilev, D.S. Saranin, P.A. Gostishchev, S.I. Didenko, A.Y. Polyakov, and A. Di Carlo, “Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking,” Optical Materials X 16, 100218 (2022).
- H. Son, P. Uthirakumar, A.Y. Polyakov, J.H. Park, K.H. Lee, and I.-H. Lee, “Impact of porosity on the structural and optoelectronic properties of nanoporous GaN double layer fabricated via combined electrochemical and photoelectrochemical etching,” Applied Surface Science 592, 153248 (2022).
- A.Y. Polyakov, V.I. Nikolaev, I.N. Meshkov, K. Siemek, P.B. Lagov, E.B. Yakimov, A.I. Pechnikov, O.S. Orlov, A.A. Sidorin, S.I. Stepanov, I.V. Shchemerov, A.A. Vasilev, A.V. Chernykh, A.A. Losev, A.D. Miliachenko, I.A. Khrisanov, Yu.S. Pavlov, U.A. Kobets, and S.J. Pearton, “Point defect creation by proton and carbon irradiation of α-Ga2O3,” Journal of Applied Physics 132(3), (2022).
- A. Polyakov, V. Nikolaev, S. Stepanov, A. Almaev, A. Pechnikov, E. Yakimov, B.O. Kushnarev, I. Shchemerov, M. Scheglov, A. Chernykh, A. Vasilev, A. Kochkova, and S.J. Pearton, “Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers,” Journal of Applied Physics 131(21), (2022).
- A.Y. Polyakov, V.I. Nikolaev, A.I. Pechnikov, S.I. Stepanov, E.B. Yakimov, M.P. Scheglov, I.V. Shchemerov, A.A. Vasilev, A.A. Kochkova, A.V. Chernykh, A.V. Chikiryaka, and S.J. Pearton, “Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates,” APL Materials 10(6), (2022).
- A.Y. Polyakov, V.I. Nikolaev, E.B. Yakimov, F. Ren, S.J. Pearton, and J. Kim, “Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance,” Journal of Vacuum Science & Technology a Vacuum Surfaces and Films 40(2), (2022).
- P.S. Vergeles, Yu.O. Kulanchikov, A.Y. Polyakov, E.B. Yakimov, and S.J. Pearton, “Electron-Beam Stimulated Release of Dislocations from Pinning Sites in GaN,” ECS Journal of Solid State Science and Technology 11(1), 015003 (2022).